LATTICE DISORDER AND RECOMBINATION CENTERS IN HEAT-TREATED FZ SILICON

被引：10

作者：

NEGRINI, P

PASSARI, L

POGGI, A

SERVIDORI, M

SUSI, E

机构：

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 1985年 / 92卷 / 01期

关键词：

D O I：

10.1002/pssa.2210920116

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：177 / 187

页数：11

共 24 条

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[5]

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[6]

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[7]

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[8]

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[10]

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