RESISTANCE BI-STABILITY IN RESONANT-TUNNELING DIODE PILLAR ARRAYS

被引:13
作者
ALPHENAAR, BW [1 ]
DURRANI, ZAK [1 ]
HEBERLE, AP [1 ]
WAGNER, M [1 ]
机构
[1] UNIV CAMBRIDGE,CAVENDISH LAB,CTR MICROELECTR RES,CAMBRIDGE CB3 0HE,ENGLAND
关键词
D O I
10.1063/1.113247
中图分类号
O59 [应用物理学];
学科分类号
摘要
We have fabricated and characterized resonant tunneling diode pillar arrays. The array resistance switches between two stable states with a maximum room temperature current peak to valley ratio of 500:1. Both the high and the low resistance states are stable at zero bias suggesting that the device may be used for non-volatile memory storage.© 1995 American Institute of Physics.
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页码:1234 / 1236
页数:3
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