MULTIPLET STRUCTURES OF TRANSITION-METAL DEEP IMPURITIES IN GAAS

被引：11

作者：

WATANABE, S

KAMIMURA, H

机构：

来源：

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1987年 / 20卷 / 26期

关键词：

D O I：

10.1088/0022-3719/20/26/016

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：4145 / 4157

页数：13

共 20 条

[1] THEORETICAL INVESTIGATION OF THE ELECTRICAL AND OPTICAL-ACTIVITY OF VANADIUM IN GAAS [J].

CALDAS, MJ ;

FIGUEIREDO, SK ;

FAZZIO, A .

PHYSICAL REVIEW B, 1986, 33 (10) :7102-7109

[2] NONLOCAL PSEUDOPOTENTIAL CALCULATIONS FOR ELECTRONIC-STRUCTURE OF 11 DIAMOND AND ZINCBLENDE SEMICONDUCTORS [J].

CHELIKOWSKY, JR ;

COHEN, ML .

PHYSICAL REVIEW B, 1976, 14 (02) :556-582

[3] TRANSITION-METAL IMPURITIES IN III-V COMPOUNDS [J].

CLERJAUD, B .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1985, 18 (19) :3615-3661

[4] THE ACCEPTOR LEVEL OF VANADIUM IN III-V COMPOUNDS [J].

CLERJAUD, B ;

NAUD, C ;

DEVEAUD, B ;

LAMBERT, B ;

PLOT, B ;

BREMOND, G ;

BENJEDDOU, C ;

GUILLOT, G ;

NOUAILHAT, A .

JOURNAL OF APPLIED PHYSICS, 1985, 58 (11) :4207-4215

[5] MANY-ELECTRON MULTIPLET EFFECTS IN THE SPECTRA OF 3D IMPURITIES IN HETEROPOLAR SEMICONDUCTORS [J].

FAZZIO, A ;

CALDAS, MJ ;

ZUNGER, A .

PHYSICAL REVIEW B, 1984, 30 (06) :3430-3455

[6] ELECTRONIC-STRUCTURE OF CU, NI, CO, AND FE SUBSTITUTIONAL IMPURITIES IN GALLIUM-ARSENIDE [J].

FAZZIO, A ;

LEITE, JR .

PHYSICAL REVIEW B, 1980, 21 (10) :4710-4720

[7] ELECTRONIC STATES OF TRANSITION-METAL IMPURITIES IN II-VI-SEMICONDUCTOR AND III-V-SEMICONDUCTORS [J].

GEMMA, N .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1984, 17 (13) :2333-2356

[8] TRENDS IN THE ELECTRONIC-PROPERTIES OF SUBSTITUTIONAL 3D TRANSITION-METAL IMPURITIES IN GAAS [J].

HEMSTREET, LA .

PHYSICAL REVIEW B, 1980, 22 (10) :4590-4599

[9]

Kamimura H., 1970, MULTIPLETS TRANSITIO

[10] PREDICTION OF A LOW-SPIN GROUND-STATE IN THE GAAS-V2+ IMPURITY SYSTEM [J].

KATAYAMAYOSHIDA, H ;

ZUNGER, A .

PHYSICAL REVIEW B, 1986, 33 (04) :2961-2964

← 1 2 →