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MBE GROWTH MECHANISMS OF ZNSE - FLUX RATIO AND SUBSTRATE-TEMPERATURE
被引:26
作者
:
ZHU, ZQ
论文数:
0
引用数:
0
h-index:
0
ZHU, ZQ
NOMURA, T
论文数:
0
引用数:
0
h-index:
0
NOMURA, T
MIYAO, M
论文数:
0
引用数:
0
h-index:
0
MIYAO, M
HAGINO, M
论文数:
0
引用数:
0
h-index:
0
HAGINO, M
机构
:
来源
:
JOURNAL OF CRYSTAL GROWTH
|
1989年
/ 95卷
/ 1-4期
关键词
:
D O I
:
10.1016/0022-0248(89)90459-4
中图分类号
:
O7 [晶体学];
学科分类号
:
0702 ;
070205 ;
0703 ;
080501 ;
摘要
:
引用
收藏
页码:529 / 532
页数:4
相关论文
共 5 条
[1]
MATERIALS GROWTH AND ITS IMPACT ON DEVICES FROM WIDE BAND-GAP II-VI COMPOUNDS
BHARGAVA, RN
论文数:
0
引用数:
0
h-index:
0
BHARGAVA, RN
[J].
JOURNAL OF CRYSTAL GROWTH,
1988,
86
(1-4)
: 873
-
879
[2]
MOLECULAR-BEAM EPITAXY OF ZINC CHALCOGENIDES
YAO, T
论文数:
0
引用数:
0
h-index:
0
YAO, T
MAEKAWA, S
论文数:
0
引用数:
0
h-index:
0
MAEKAWA, S
[J].
JOURNAL OF CRYSTAL GROWTH,
1981,
53
(02)
: 423
-
431
[3]
GROWTH-RATE AND STICKING COEFFICIENT OF ZNSE AND ZNTE GROWN BY MOLECULAR-BEAM EPITAXY
YAO, T
论文数:
0
引用数:
0
h-index:
0
机构:
ELECTROTECH LAB TANASHI,TOKYO 188,JAPAN
ELECTROTECH LAB TANASHI,TOKYO 188,JAPAN
YAO, T
MIYOSHI, Y
论文数:
0
引用数:
0
h-index:
0
机构:
ELECTROTECH LAB TANASHI,TOKYO 188,JAPAN
ELECTROTECH LAB TANASHI,TOKYO 188,JAPAN
MIYOSHI, Y
MAKITA, Y
论文数:
0
引用数:
0
h-index:
0
机构:
ELECTROTECH LAB TANASHI,TOKYO 188,JAPAN
ELECTROTECH LAB TANASHI,TOKYO 188,JAPAN
MAKITA, Y
MAEKAWA, S
论文数:
0
引用数:
0
h-index:
0
机构:
ELECTROTECH LAB TANASHI,TOKYO 188,JAPAN
ELECTROTECH LAB TANASHI,TOKYO 188,JAPAN
MAEKAWA, S
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS,
1977,
16
(02)
: 369
-
370
[4]
INTENSITY VARIATIONS OF REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION DURING ATOMIC LAYER EPITAXIAL-GROWTH AND SUBLIMATION OF ZN CHALCOGENIDES
YAO, T
论文数:
0
引用数:
0
h-index:
0
YAO, T
TAKEDA, T
论文数:
0
引用数:
0
h-index:
0
TAKEDA, T
[J].
JOURNAL OF CRYSTAL GROWTH,
1987,
81
(1-4)
: 43
-
48
[5]
ZHU Z, 1988, JAPAN J SURFACE SCI, V9, P343
←
1
→
共 5 条
[1]
MATERIALS GROWTH AND ITS IMPACT ON DEVICES FROM WIDE BAND-GAP II-VI COMPOUNDS
BHARGAVA, RN
论文数:
0
引用数:
0
h-index:
0
BHARGAVA, RN
[J].
JOURNAL OF CRYSTAL GROWTH,
1988,
86
(1-4)
: 873
-
879
[2]
MOLECULAR-BEAM EPITAXY OF ZINC CHALCOGENIDES
YAO, T
论文数:
0
引用数:
0
h-index:
0
YAO, T
MAEKAWA, S
论文数:
0
引用数:
0
h-index:
0
MAEKAWA, S
[J].
JOURNAL OF CRYSTAL GROWTH,
1981,
53
(02)
: 423
-
431
[3]
GROWTH-RATE AND STICKING COEFFICIENT OF ZNSE AND ZNTE GROWN BY MOLECULAR-BEAM EPITAXY
YAO, T
论文数:
0
引用数:
0
h-index:
0
机构:
ELECTROTECH LAB TANASHI,TOKYO 188,JAPAN
ELECTROTECH LAB TANASHI,TOKYO 188,JAPAN
YAO, T
MIYOSHI, Y
论文数:
0
引用数:
0
h-index:
0
机构:
ELECTROTECH LAB TANASHI,TOKYO 188,JAPAN
ELECTROTECH LAB TANASHI,TOKYO 188,JAPAN
MIYOSHI, Y
MAKITA, Y
论文数:
0
引用数:
0
h-index:
0
机构:
ELECTROTECH LAB TANASHI,TOKYO 188,JAPAN
ELECTROTECH LAB TANASHI,TOKYO 188,JAPAN
MAKITA, Y
MAEKAWA, S
论文数:
0
引用数:
0
h-index:
0
机构:
ELECTROTECH LAB TANASHI,TOKYO 188,JAPAN
ELECTROTECH LAB TANASHI,TOKYO 188,JAPAN
MAEKAWA, S
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS,
1977,
16
(02)
: 369
-
370
[4]
INTENSITY VARIATIONS OF REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION DURING ATOMIC LAYER EPITAXIAL-GROWTH AND SUBLIMATION OF ZN CHALCOGENIDES
YAO, T
论文数:
0
引用数:
0
h-index:
0
YAO, T
TAKEDA, T
论文数:
0
引用数:
0
h-index:
0
TAKEDA, T
[J].
JOURNAL OF CRYSTAL GROWTH,
1987,
81
(1-4)
: 43
-
48
[5]
ZHU Z, 1988, JAPAN J SURFACE SCI, V9, P343
←
1
→