HALL EFFECT OF N-TYPE GAAS IN HIGH ELECTRIC FIELDS

[1] MICROWAVE OSCILLATIONS IN GAASXP1-X ALLOYS (PULSED DC EXCITATION - E/T) [J]. APPLIED PHYSICS LETTERS, 1965, 7 (04) : 78 - &

[2] HIGH-TEMPERATURE HALL COEFFICIENT IN GAS [J]. JOURNAL OF APPLIED PHYSICS, 1960, 31 (05) : 939 - 940

[3] INTERVALLEY TRANSFER MECHANISM OF NEGATIVE RESISTIVITY IN BULK SEMICONDUCTORS [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1965, 86 (554P): : 1205 - &

[4] CALCULATION OF VELOCITY-FIELD CHARACTERISTIC FOR GALLIUM ARSENIDE [J]. PHYSICS LETTERS, 1966, 21 (05): : 489 - &

[5] CONNELL EM, PRIVATE COMMUNICATIO

[6] FIELD DEPENDENCE OF MOBILITY IN (100) CONDUCTION BAND MINIMA OF GAAS [J]. PHYSICS LETTERS, 1966, 21 (04): : 368 - +

[7] HIGH-FIELD DISTRIBUTION FUNCTION IN GAAS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (01) : 22 - +

[8] BAND STRUCTURE AND ELECTRON TRANSPORT OF GAAS [J]. PHYSICAL REVIEW, 1960, 120 (06): : 1951 - 1963

[9] FAWCETT W, PRIVATE COMMUNICATIO

[10] GUNN EFFECT IN POLAR SEMICONDUCTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (01) : 79 - +

[1] MICROWAVE OSCILLATIONS IN GAASXP1-X ALLOYS (PULSED DC EXCITATION - E/T) [J]. APPLIED PHYSICS LETTERS, 1965, 7 (04) : 78 - &

[2] HIGH-TEMPERATURE HALL COEFFICIENT IN GAS [J]. JOURNAL OF APPLIED PHYSICS, 1960, 31 (05) : 939 - 940

[3] INTERVALLEY TRANSFER MECHANISM OF NEGATIVE RESISTIVITY IN BULK SEMICONDUCTORS [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1965, 86 (554P): : 1205 - &

[4] CALCULATION OF VELOCITY-FIELD CHARACTERISTIC FOR GALLIUM ARSENIDE [J]. PHYSICS LETTERS, 1966, 21 (05): : 489 - &

[5] CONNELL EM, PRIVATE COMMUNICATIO

[6] FIELD DEPENDENCE OF MOBILITY IN (100) CONDUCTION BAND MINIMA OF GAAS [J]. PHYSICS LETTERS, 1966, 21 (04): : 368 - +

[7] HIGH-FIELD DISTRIBUTION FUNCTION IN GAAS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (01) : 22 - +

[8] BAND STRUCTURE AND ELECTRON TRANSPORT OF GAAS [J]. PHYSICAL REVIEW, 1960, 120 (06): : 1951 - 1963

[9] FAWCETT W, PRIVATE COMMUNICATIO

[10] GUNN EFFECT IN POLAR SEMICONDUCTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (01) : 79 - +