ER3+ DOPING OF CAF2 LAYERS GROWN BY MOLECULAR-BEAM EPITAXY

被引：29

作者：

DARAN, E ^{[1
]}

BAUSA, LE ^{[1
]}

MUNOZYAGUE, A ^{[1
]}

FONTAINE, C ^{[1
]}

机构：

[1] UNIV AUTONOMA MADRID,DEPT FIS MAT C-IV,E-28049 MADRID,SPAIN

来源：

APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 21期

关键词：

D O I：

10.1063/1.109263

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Molecular beam epitaxy of CaF2 monocrystalline layers Er3+ doped up to a concentration of 5 wt % is demonstrated on CaF2 substrates. Separated effusion cells containing CaF2 and ErF3 were used. The photoluminescence spectra of the samples show emissions from centers of different symmetry identified by reference to published results obtained on CaF2:Er3+ bulk crystals. No influence of the substrate orientation-(100) or (111)-on the luminescence characteristics was observed.

引用

页码：2616 / 2618

页数：3

共 15 条

[1]

AUZEL F, 1966, CR ACAD SCI B PHYS, V262, P1016

[2]

BATYOGOV SK, 1975, SOV J QUANTUM ELECTR, V4, P1489

[3] OPTIMAL-GROWTH CONDITIONS FOR MOLECULAR-BEAM EPITAXY OF ND3+ DOPED CAF2 [J].

BAUSA, LE ;

MUNOZYAGUE, A .

APPLIED PHYSICS LETTERS, 1991, 59 (27) :3511-3513

[4] MOLECULAR-BEAM EPITAXY OF ND-DOPED CAF2 AND CASRF2 LAYERS ON SI AND GAAS SUBSTRATES [J].

BAUSA, LE ;

FONTAINE, C ;

DARAN, E ;

MUNOZYAGUE, A .

JOURNAL OF APPLIED PHYSICS, 1992, 72 (02) :499-503

[5] THE ELECTRICAL AND DEFECT PROPERTIES OF ERBIUM-IMPLANTED SILICON [J].

BENTON, JL ;

MICHEL, J ;

KIMERLING, LC ;

JACOBSON, DC ;

XIE, YH ;

EAGLESHAM, DJ ;

FITZGERALD, EA ;

POATE, JM .

JOURNAL OF APPLIED PHYSICS, 1991, 70 (05) :2667-2671

[6] 1.54-MU-M ELECTROLUMINESCENCE OF ERBIUM-DOPED SILICON GROWN BY MOLECULAR-BEAM EPITAXY [J].

ENNEN, H ;

POMRENKE, G ;

AXMANN, A ;

EISELE, K ;

HAYDL, W ;

SCHNEIDER, J .

APPLIED PHYSICS LETTERS, 1985, 46 (04) :381-383

[7] INFRARED-PUMPED VISIBLE LASER [J].

JOHNSON, LF ;

GUGGENHEIM, HJ .

APPLIED PHYSICS LETTERS, 1971, 19 (02) :44-+

[8]

KAMINSKII AA, 1991, SPRINGER SERIES OPTI, P166

[9] ION-PAIR UPCONVERSION PUMPED LASER-EMISSION IN ER3+ IONS IN YAG, YLF, SRF2, AND CAF2 CRYSTALS [J].

POLLACK, SA ;

CHANG, DB .

JOURNAL OF APPLIED PHYSICS, 1988, 64 (06) :2885-2893

[10] OPTICAL DOPING OF WAVE-GUIDE MATERIALS BY MEV ER IMPLANTATION [J].

POLMAN, A ;

JACOBSON, DC ;

EAGLESHAM, DJ ;

KISTLER, RC ;

POATE, JM .

JOURNAL OF APPLIED PHYSICS, 1991, 70 (07) :3778-3784

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