OPTIMAL-GROWTH CONDITIONS FOR MOLECULAR-BEAM EPITAXY OF ND3+ DOPED CAF2

被引：10

作者：

BAUSA, LE

MUNOZYAGUE, A

机构：

[1] Laboratoire d'Automatique et d'Analyse des Systèmes du C.N.R.S., 31077 Toulouse Cedex, 7, Av. du Colonel Roche

来源：

APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 27期

关键词：

D O I：

10.1063/1.105665

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Nd3+ incorporation in CaF2 layers grown by molecular-beam epitaxy on CaF2 substrates is investigated by making use of the photoluminescence lines associated with Nd3+ centers involving one or several Nd3+ ions. It is shown that the substrate crystal orientation has no effect on the aggregation state of Nd3+ while the growth temperature greatly influences the formation of Nd3+ aggregate centers. An optimum growth temperature around 500-degrees-C is determined, leading to CaF2 layers of good crystal quality in which the main emission, related to single Nd3+ centers, is optimized. The results have been obtained for Nd 3 , concentrations as high as 3.6 wt % Nd and growth rates in the range of 0.2-1-mu-m/h.

引用

页码：3511 / 3513

页数：3

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