MOLECULAR-BEAM EPITAXY OF ND-DOPED CAF2 AND CASRF2 LAYERS ON SI AND GAAS SUBSTRATES

被引：18

作者：

BAUSA, LE ^{[1
]}

FONTAINE, C ^{[1
]}

DARAN, E ^{[1
]}

MUNOZYAGUE, A ^{[1
]}

机构：

[1] CNRS,AUTOMAT & ANAL SYSTEM LAB,F-31077 TOULOUSE,FRANCE

来源：

JOURNAL OF APPLIED PHYSICS | 1992年 / 72卷 / 02期

关键词：

D O I：

10.1063/1.351880

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The incorporation of Nd3+ in CaF2 layers grown on Si and GaAs substrates by molecular beam epitaxy is studied by photoluminescence spectroscopy. The results are in qualitative agreement with those obtained on CaF2:Nd homoepitaxial layers. A lower emission intensity (approximately 70%) at lambda = 1.0475-mu-m is attributed to residual stress and crystalline defects. Concentration quenching of photoluminescence appears at concentrations higher than 3.6 wt % Nd. The use of (Ca,Sr)F2 for lattice matching to GaAs leads to a significant inhomogeneous broadening of Nd3+ emissions due to disorder in the cationic sublattice.

引用

页码：499 / 503

页数：5

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