ULTRASOFT X-RAY-EMISSION SPECTROSCOPIC ANALYSIS FOR EFFECTS OF VACUUM-ULTRAVIOLET RARE-GAS EXCIMER-LASER IRRADIATION ON SILICON-NITRIDE FILMS

被引：8

作者：

KURMAEV, EZ

SHAMIN, SN

DOLGIH, VE

KUROSAWA, K

NAKAMAE, K

TAKIGAWA, Y

KAMEYAMA, A

YOKOTANI, A

SASAKI, W

机构：

[1] RUSSIAN ACAD SCI, INST PHYS MET, DIV URAL, SVERDLOVSK 620219, RUSSIA

[2] UNIV OSAKA PREFECTURE, DEPT PHYS & ELECTR, SAKAI, OSAKA 593, JAPAN

[3] OSAKA ELECTROCOMMUN UNIV, DEPT SOLID STATE ELECTR, NEYAGAWA 572, JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1994年 / 33卷 / 11A期

关键词：

ULTRASOFT X-RAY; VACUUM ULTRAVIOLET LASER; EMISSION SPECTROSCOPY; RARE GAS EXCIMER LASER; SILICON; SILICON NITRIDE;

D O I：

10.1143/JJAP.33.L1549

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The results of measurements of Si-L(2,3) X-ray emission spectra of Si3N4 films deposited on GaAs substrates after irradiation by Kr-2 and Ar-2 excimer lasers are presented. By using the excitation of X-ray emission spectra with focused electron beam, local precipitation of crystalline silicon is found.

引用

页码：L1549 / L1551

页数：3

共 12 条

[1] ANALYSIS OF THE DEPTH PROFILE OF FE-SI BURIED LAYERS IN FE+-IMPLANTED SI WAFER BY SOFT-X-RAY EMISSION-SPECTROSCOPY [J].