REDUCING REVERSE-BIAS CURRENT IN 450-DEGREES-C-ANNEALED N(+)P JUNCTION BY HYDROGEN RADICAL SINTERING

被引：7

作者：

OKA, MM ^{[1
]}

NAKADA, A ^{[1
]}

TOMITA, K ^{[1
]}

SHIBATA, T ^{[1
]}

OHMI, T ^{[1
]}

NITTA, T ^{[1
]}

机构：

[1] HITACHI LTD,CTR DEVICE DEV,TOKYO 198,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1995年 / 34卷 / 2B期

关键词：

ION IMPLANTATION; LOW-TEMPERATURE ANNEALING; HYDROGEN RADICAL; SINTERING; LIFETIME; N(+)P JUNCTION;

D O I：

10.1143/JJAP.34.796

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Ultra-shallow n(+)p junctions featuring very low reverse-bias current densities (3.1 x 10(-9) A . cm(-2) at 5 V) have been successfully formed at a post-implantation annealing temperature as low as 450 degrees C. Such a low reverse-bias current level has been achieved by eliminating residual point defects remaining after 450 degrees C post-implantation annealing. A newly developed hydrogen radical sintering (H* sintering) is presented as a promising method to eliminate these defects and thus improve the characteristics of junctions formed by low-temperature post-implantation annealing.

引用

页码：796 / 799

页数：4

共 14 条

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[Anonymous], 1991, HYDROGEN SEMICONDUCT

[2]

CARTER C, 1989, APPL PHYS LETT, V44, P459

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