ROLES OF EXTENDED DEFECT EVOLUTION ON THE ANOMALOUS DIFFUSION OF BORON IN SI DURING RAPID THERMAL ANNEALING

被引:27
作者
KIM, YM
LO, GQ
KINOSHITA, H
KWONG, DL
TSENG, HH
HANCE, R
机构
[1] MOTOROLA INC,ADV PROD RES & DEV LAB,AUSTIN,TX 78762
[2] MOTOROLA INC,SURFACE ANAL LAB,AUSTIN,TX 78762
关键词
D O I
10.1149/1.2085728
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
The role of extended defect evolution on the anomalous diffusion of boron during rapid thermal annealing (RTA) was studied by investigating the diffusion behavior of boron implanted into various Si substrates using secondary ion mass spectroscopy and transmission electron microscopy, i.e., predamaged wafers with low dose Si implantation, preamorphized wafers with high dose Si implantation, and single-crystal wafers without any previous implantation. Low-dose Si preimplantation reduced the channeled tail significantly in subsequent boron implantation and resulted in a larger anomalous diffusion of boron and faster annealing of extended defect during RTA compared to crystalline Si samples. Diffusion of boron implanted into preamorphized Si was found to be anomalous in nature and its magnitude was dependent upon the RTA temperature. The temperature dependence was found to be due to the difference in the density of dislocation loops formed during RTA at the original amorphous/crystalline (a/c) interface. These loops determined the effectiveness of the trapping Si interstitials diffusing from the crystalline side of the original a/c interface to the expitaxially regrown region. Anomalous diffusion of boron in the crystalline Si samples was found to be a strong function of implant dose. Diffusion displacement increased and anomalous diffusion effect lasted longer with increasing implant dose. Diffusion enhancement for longer periods of time in samples with higher implant doses was related to the formation and annealing of extended defects. At very high doses (> 2 x 10(15) cm 2), where the peak boron concentration was above the solid solubility, excess diffusion in the high boron concentration region was observed. The excess diffusion was explained in terms of segregation of boron into interstitial dislocation loops in the early stage of RTA and the subsequent annealing of these dislocation loops after the initial large anomalous tail diffusion.
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页码:1122 / 1130
页数:9
相关论文
共 38 条
[1]   TEMPERATURE AND TIME-DEPENDENCE OF DOPANT ENHANCED DIFFUSION IN SELF-ION IMPLANTED SILICON [J].
ANGELUCCI, R ;
CEMBALI, F ;
NEGRINI, P ;
SERVIDORI, M ;
SOLMI, S .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (12) :3130-3134
[2]   COMPARISON OF BORON DIFFUSIVITY DURING RAPID THERMAL ANNEALING IN PREDAMAGED, PREAMORPHIZED AND CRYSTALLINE SILICON [J].
ARMIGLIATO, A ;
GUIMARAES, S ;
SOLMI, S ;
KOGLER, R ;
WIESER, E .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1987, 19-20 :512-515
[3]  
Armigliato A., 1977, ELECTROCHEMICAL SOC, P638
[4]   TRANSIENT ENHANCED DIFFUSION DURING RAPID THERMAL ANNEALING OF BORON IMPLANTED SILICON [J].
CHO, K ;
NUMAN, M ;
FINSTAD, TG ;
CHU, WK ;
LIU, J ;
WORTMAN, JJ .
APPLIED PHYSICS LETTERS, 1985, 47 (12) :1321-1323
[5]   TRANSIENT DIFFUSION OF BORON IMPLANTED IN SI ALONG RANDOM AND CHANNELING DIRECTIONS [J].
CHU, WK ;
NUMAN, MZ ;
ZHANG, JZ ;
SANDHU, GS ;
MICHEL, AE .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1989, 37-8 :365-370
[6]  
COWERN NEB, 1986, MATER RES SOC S P, V52, P65
[7]   THE ROLE OF TRANSIENT DAMAGE ANNEALING IN SHALLOW JUNCTION FORMATION [J].
FAIR, RB .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1989, 37-8 :371-378
[8]   LOW-THERMAL-BUDGET PROCESS MODELING WITH THE PREDICT COMPUTER-PROGRAM [J].
FAIR, RB .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1988, 35 (03) :285-293
[9]   MODELING RAPID THERMAL-DIFFUSION OF ARSENIC AND BORON IN SILICON [J].
FAIR, RB ;
WORTMAN, JJ ;
LIU, J .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (10) :2387-2394