DEFECT-COUPLED DIFFUSION AT HIGH-CONCENTRATIONS

被引：28

作者：

GILES, MD

机构：

来源：

IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS | 1989年 / 8卷 / 05期

关键词：

D O I：

10.1109/43.24874

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

引用

页码：460 / 467

页数：8

共 16 条

[1] DIFFUSION OF SUBSTITUTIONAL IMPURITIES IN SILICON AT SHORT OXIDATION TIMES - AN INSIGHT INTO POINT-DEFECT KINETICS [J].

ANTONIADIS, DA ;

MOSKOWITZ, I .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (10) :6788-6796

[2]

FAIR RB, 1981, IMPURITY DOPING PROC, pCH7

[3]

FAIR RB, 1981, SILICON INTEGRATED C

[4] INTERACTIONS OF POINT DEFECTS WITH IMPURITIES IN SILICON [J].

HIRATA, M ;

SAITO, H .

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1969, 27 (02) :405-&

[5] ROLE OF DEFECT CHARGE STATE IN STABILITY OF POINT-DEFECTS IN SILICON [J].

KIMERLING, LC ;

DEANGELIS, HM ;

DIEBOLD, JW .

SOLID STATE COMMUNICATIONS, 1975, 16 (01) :171-174

[6]

LAW ME, 1988, THESIS STANFORD U ST

[7] DOPANT DIFFUSION IN SILICON - A CONSISTENT VIEW INVOLVING NONEQUILIBRIUM DEFECTS [J].

MATHIOT, D ;

PFISTER, JC .

JOURNAL OF APPLIED PHYSICS, 1984, 55 (10) :3518-3530

[8] CONCENTRATION-DEPENDENCE OF THE DIFFUSION-COEFFICIENT OF BORON IN SILICON [J].

MATSUMOTO, S ;

ISHIKAWA, Y ;

SHIRAI, Y ;

SEKINE, S ;

NIMI, T .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (01) :217-218

[9] OXIDATION-ENHANCED DIFFUSION OF ION-IMPLANTED BORON IN SILICON IN EXTRINSIC CONDITIONS [J].

MIYAKE, M .

JOURNAL OF APPLIED PHYSICS, 1985, 57 (06) :1861-1868

[10] OXIDATION-ENHANCED DIFFUSION OF ION-IMPLANTED BORON IN HEAVILY PHOSPHORUS-DOPED SILICON [J].

MIYAKE, M .

JOURNAL OF APPLIED PHYSICS, 1985, 58 (02) :711-715

← 1 2 →