OXIDATION-ENHANCED DIFFUSION OF ION-IMPLANTED BORON IN HEAVILY PHOSPHORUS-DOPED SILICON

被引：16

作者：

MIYAKE, M

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1985年 / 58卷 / 02期

关键词：

D O I：

10.1063/1.336311

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：711 / 715

页数：5

共 23 条

[1] EFFECT OF OXIDATION ON ORIENTATION-DEPENDENT BORON DIFFUSION IN SILICON [J].

ALLEN, WG .

SOLID-STATE ELECTRONICS, 1973, 16 (06) :709-717

[2] ORIENTATION DEPENDENCE OF DIFFUSION OF BORON IN SILICON [J].

ALLEN, WG ;

ANAND, KV .

SOLID-STATE ELECTRONICS, 1971, 14 (05) :397-&

[3] DIFFUSION OF SUBSTITUTIONAL IMPURITIES IN SILICON AT SHORT OXIDATION TIMES - AN INSIGHT INTO POINT-DEFECT KINETICS [J].

ANTONIADIS, DA ;

MOSKOWITZ, I .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (10) :6788-6796

[4] BORON IN NEAR-INTRINSIC (100) AND (111) SILICON UNDER INERT AND OXIDIZING AMBIENTS-DIFFUSION AND SEGREGATION [J].

ANTONIADIS, DA ;

GONZALEZ, AG ;

DUTTON, RW .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (05) :813-819

[5] IMPURITY REDISTRIBUTION AND JUNCTION FORMATION IN SILICON BY THERMAL OXIDATION [J].

ATALLA, MM ;

TANNENBAUM, E .

BELL SYSTEM TECHNICAL JOURNAL, 1960, 39 (04) :933-946

[6] BORON SEGREGATION AT SI-SIO2 INTERFACE AS A FUNCTION OF TEMPERATURE AND ORIENTATION [J].

COLBY, JW ;

KATZ, LE .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (03) :409-412

[7]

DOUGLAS EC, 1974, IEEE T ELECTRON DEV, VED21, P324, DOI 10.1109/T-ED.1974.17924

[8] QUANTITATIVE MODEL FOR DIFFUSION OF PHOSPHORUS IN SILICON AND EMITTER DIP EFFECT [J].

FAIR, RB ;

TSAI, JCC .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (07) :1107-1118

[9] OXIDATION, IMPURITY DIFFUSION, AND DEFECT GROWTH IN SILICON - AN OVERVIEW [J].

FAIR, RB .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (06) :1360-1368

[10] BORON-DIFFUSION IN SILICON-CONCENTRATION AND ORIENTATION DEPENDENCE, BACKGROUND EFFECTS, AND PROFILE ESTIMATION [J].

FAIR, RB .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (06) :800-805

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