CONCENTRATION-DEPENDENCE OF THE DIFFUSION-COEFFICIENT OF BORON IN SILICON

被引：17

作者：

MATSUMOTO, S

ISHIKAWA, Y

SHIRAI, Y

SEKINE, S

NIMI, T

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1980年 / 19卷 / 01期

关键词：

D O I：

10.1143/JJAP.19.217

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：217 / 218

页数：2

共 10 条

[1] NEW MODEL FOR BORON-DIFFUSION IN SILICON [J].

ANDERSON, JR ;

GIBBONS, JF .

APPLIED PHYSICS LETTERS, 1976, 28 (04) :184-186

[2] BORON-DIFFUSION IN SILICON-CONCENTRATION AND ORIENTATION DEPENDENCE, BACKGROUND EFFECTS, AND PROFILE ESTIMATION [J].

FAIR, RB .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (06) :800-805

[3] RESISTIVITY OF BULK SILICON AND OF DIFFUSED LAYERS IN SILICON [J].

IRVIN, JC .

BELL SYSTEM TECHNICAL JOURNAL, 1962, 41 (02) :387-+

[4]

Matano C., 1933, JPN J APPL PHYS, V8, P109

[5]

MATSUMOTO S, 1976, JPN J APPL PHYS, V15, P2077, DOI 10.1143/JJAP.15.2077

[6] ELECTRICAL PROPERTIES OF SILICON CONTAINING ARSENIC AND BORON [J].

MORIN, FJ ;

MAITA, JP .

PHYSICAL REVIEW, 1954, 96 (01) :28-35

[7] BORON DIFFUSION INTO SILICON USING ELEMENTAL BORON [J].

OKAMURA, M .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1969, 8 (12) :1440-&

[8] DISTRIBUTION OF BORON-INDUCED DEFECTS IN SHALLOW DIFFUSED SURFACE LAYERS OF SILICON [J].

RUPPRECHT, H ;

SCHWUTTKE, GH .

JOURNAL OF APPLIED PHYSICS, 1966, 37 (07) :2862-+

[9] SOLID SOLUBILITY AND DIFFUSION COEFFICIENTS OF BORON IN SILICON [J].

VICK, GL ;

WHITTLE, KM .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (08) :1142-&

[10] EXCESS VACANCY GENERATION MECHANISM AT PHOSPHORUS DIFFUSION INTO SILICON [J].

YOSHIDA, M ;

ARAI, E ;

NAKAMURA, H ;

TERUNUMA, Y .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (04) :1498-1506

← 1 →