OXIDATION-ENHANCED DIFFUSION OF ION-IMPLANTED BORON IN SILICON IN EXTRINSIC CONDITIONS

被引：35

作者：

MIYAKE, M

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1985年 / 57卷 / 06期

关键词：

D O I：

10.1063/1.334416

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1861 / 1868

页数：8

共 28 条

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