COMPARISON OF BORON DIFFUSIVITY DURING RAPID THERMAL ANNEALING IN PREDAMAGED, PREAMORPHIZED AND CRYSTALLINE SILICON

被引：9

作者：

ARMIGLIATO, A ^{[1
]}

GUIMARAES, S ^{[1
]}

SOLMI, S ^{[1
]}

KOGLER, R ^{[1
]}

WIESER, E ^{[1
]}

机构：

[1] ACAD SCI GDR, ZENT INST KERNFORSCH ROSSENDORF, DDR-8051 DRESDEN, GER DEM REP

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1987年 / 19-20卷

关键词：

D O I：

10.1016/S0168-583X(87)80102-7

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：512 / 515

页数：4

共 12 条

[1] PRECIPITATION AND DIFFUSIVITY OF ARSENIC IN SILICON [J].

ANGELUCCI, R ;

CELOTTI, G ;

NOBILI, D ;

SOLMI, S .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (11) :2726-2730

[2] RADIATION-INDUCED ROD-LIKE DEFECTS IN SILICON AND GERMANIUM [J].

BARTSCH, H ;

HOEHL, D ;

KASTNER, G .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1984, 83 (02) :543-551

[3]

COWERN NGB, 1986, P MATER RES SOC, V52, P65

[4]

FAHEY P, 1986, SEMICONDUCTOR SILICO, P571

[5] MODELING RAPID THERMAL-DIFFUSION OF ARSENIC AND BORON IN SILICON [J].

FAIR, RB ;

WORTMAN, JJ ;

LIU, J .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (10) :2387-2394

[6]

FAIR RB, 1981, SILICON INTEGRATED B, P1

[7]

FAIR RB, 1985, P MATER RES SOC, V35, P381

[8] ANOMALOUS ENHANCED DIFFUSION AND ELECTRICAL ACTIVATION OF BORON IN SILICON AFTER RAPID ISOTHERMAL ANNEALING [J].

GUIMARAES, S ;

KOGLER, R ;

LANDI, E ;

SOLMI, S ;

WIESER, E .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1986, 93 (02) :549-557

[9]

GUIMARAES S, 1986, PHYS STATUS SOLIDI A, V95, P761

[10]

MICHEL AE, 1986, P MATER RES SOC, V52, P3

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