TEMPERATURE AND TIME-DEPENDENCE OF DOPANT ENHANCED DIFFUSION IN SELF-ION IMPLANTED SILICON

被引:39
作者
ANGELUCCI, R
CEMBALI, F
NEGRINI, P
SERVIDORI, M
SOLMI, S
机构
[1] CNR, Bologna, Italy, CNR, Bologna, Italy
关键词
ANTIMONY AND ALLOYS - Diffusion - ARSENIC - Diffusion - BORON - Diffusion - PHOSPHORUS - Diffusion - SEMICONDUCTOR MATERIALS - Defects;
D O I
10.1149/1.2100355
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
Diffusion experiments for boron, phosphorus, arsenic, and antimony were performed in the presence of lattice defects produced by silicon ion implantation. The effects of transient enhanced diffusion were revealed by beveling and staining measurements on selectively implanted samples and by SIMS determinations of dopant profiles. The annealing of the doped implanted specimens ranged from 700 degree to 1100 degree C, the last treatment having been made by electron beam. The low temperatures allowed the following of the kinetics of the anomalous diffusion: it was ascertained that the enhanced diffusion coefficient is nearly constant until a time value is reached which decreases with the temperature increase, after which it tends gradually to the equilibrium value.
引用
收藏
页码:3130 / 3134
页数:5
相关论文
共 32 条
[1]   TRANSIENT ENHANCED DIFFUSION OF DOPANTS IN SILICON INDUCED BY IMPLANTATION DAMAGE [J].
ANGELUCCI, R ;
NEGRINI, P ;
SOLMI, S .
APPLIED PHYSICS LETTERS, 1986, 49 (21) :1468-1470
[2]  
BRONNER GB, 1985, MATER RES SOC S P, V36, P49
[3]   DOUBLE-CRYSTAL X-RAY-DIFFRACTION ANALYSIS OF LOW-TEMPERATURE ION-IMPLANTED SILICON [J].
CEMBALI, F ;
SERVIDORI, M ;
ZANI, A .
SOLID-STATE ELECTRONICS, 1985, 28 (09) :933-&
[4]   TRANSIENT ENHANCED DIFFUSION DURING RAPID THERMAL ANNEALING OF BORON IMPLANTED SILICON [J].
CHO, K ;
NUMAN, M ;
FINSTAD, TG ;
CHU, WK ;
LIU, J ;
WORTMAN, JJ .
APPLIED PHYSICS LETTERS, 1985, 47 (12) :1321-1323
[5]   KINETICS OF THERMAL NITRIDATION PROCESSES IN THE STUDY OF DOPANT DIFFUSION MECHANISMS IN SILICON [J].
FAHEY, P ;
BARBUSCIA, G ;
MOSLEHI, M ;
DUTTON, RW .
APPLIED PHYSICS LETTERS, 1985, 46 (08) :784-786
[6]   SUPERSATURATION OF SELF-INTERSTITIALS AND UNDERSATURATION OF VACANCIES DURING PHOSPHORUS DIFFUSION IN SILICON [J].
FAHEY, P ;
DUTTON, RW ;
HU, SM .
APPLIED PHYSICS LETTERS, 1984, 44 (08) :777-779
[7]  
FAHEY P, 1986, ELECTROCHEMICAL SOC, P571
[8]  
FAHEY PM, 1986, J APPL PHYS, V60, P4229
[9]   QUANTITATIVE MODEL FOR DIFFUSION OF PHOSPHORUS IN SILICON AND EMITTER DIP EFFECT [J].
FAIR, RB ;
TSAI, JCC .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (07) :1107-1118
[10]   MODELING RAPID THERMAL-DIFFUSION OF ARSENIC AND BORON IN SILICON [J].
FAIR, RB ;
WORTMAN, JJ ;
LIU, J .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (10) :2387-2394