HOT HOLE EFFECTS IN SINGLE BARRIER P-TYPE GAAS/(ALGA)AS/GAAS TUNNEL STRUCTURES

被引：8

作者：

ALIKACEM, M ^{[1
]}

MAUDE, DK ^{[1
]}

EAVES, L ^{[1
]}

HENINI, M ^{[1
]}

HILL, G ^{[1
]}

PATE, MA ^{[1
]}

机构：

[1] UNIV SHEFFIELD,DEPT AGR,SHEFFIELD S1 3JD,S YORKSHIRE,ENGLAND

来源：

APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 24期

关键词：

D O I：

10.1063/1.105759

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Oscillatory structure in the low-temperature current-voltage characteristics of Be-doped p-type GaAs/(AlGa)As/GaAs single barrier tunneling devices is observed. The oscillations have period DELTA-V = 39 mV, close to hBAR-omega(L)/e, where hBAR-omega(L) is the longitudinal optic (LO) phonon energy in GaAs. They result from energy relaxation of hot holes injected through the tunnel barrier. The oscillatory amplitude varies as exp(E(a)/2kT), where E(a) is the ionization energy of the Be acceptors.

引用

页码：3124 / 3126

页数：3

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