LINE BROADENING IN SEMICONDUCTOR CORE-LEVEL PHOTOEMISSION INDUCED BY BARRIER HEIGHT INHOMOGENEITY

被引:11
作者
CIMINO, R
GIARANTE, A
HORN, K
PEDIO, M
机构
[1] MAX PLANCK GESELL, FRITZ HABER INST, D-14195 BERLIN, GERMANY
[2] CNR, IST STRUTTURA MAT, I-00044 FRASCATI, ITALY
关键词
GALLIUM ARSENIDE; LOW INDEX SINGLE CRYSTAL SURFACES; METAL-SEMICONDUCTOR INTERFACES; PHOTOELECTRON EMISSION; PHOTOELECTRON SPECTROSCOPY; SCHOTTKY BARRIER; SURFACE DEFECTS; SURFACE ELECTRONIC PHENOMENA; SURFACE STRUCTURE;
D O I
10.1016/0039-6028(95)00300-2
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
High resolution core level photoemission spectra from clean GaAs(110) semiconductor surfaces are analyzed considering the possibility of focal barrier height variations at the surface. A simple model calculation is presented and is used to predict the effects of such local variations on the line shape of Ga 3d and As 3d core level emission. We clearly show that the presence of differently pinned zones on the surface leads to an extra broadening which may mask some of the important information usually extracted by conventional core level fitting analysis. By discussing the Ga 3d and As 3d line shape changes, which occur as a function of temperature, we give experimental evidence that barrier height fluctuations can indeed be present and can strongly affect core level photoemission spectra.
引用
收藏
页码:534 / 539
页数:6
相关论文
共 31 条
[1]  
ALLEN RE, 1981, SURF SCI, V110, pL625, DOI 10.1016/0039-6028(81)90633-6
[2]   SCHOTTKY-BARRIER HEIGHTS AND INTERFACE CHEMISTRY IN AG, IN, AND AL OVERLAYERS ON GAP(110) [J].
ALONSO, M ;
CIMINO, R ;
MAIERHOFER, C ;
CHASSE, T ;
BRAUN, W ;
HORN, K .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1990, 8 (04) :955-963
[3]   SURFACE PHOTOVOLTAGE EFFECTS IN PHOTOEMISSION FROM METAL-GAP(110) INTERFACES - IMPORTANCE FOR BAND-BENDING EVALUATION [J].
ALONSO, M ;
CIMINO, R ;
HORN, K .
PHYSICAL REVIEW LETTERS, 1990, 64 (16) :1947-1950
[4]   THE STRUCTURE AND PROPERTIES OF METAL-SEMICONDUCTOR INTERFACES [J].
Brillson, L. J. .
SURFACE SCIENCE REPORTS, 1982, 2 (02) :123-326
[5]   MICROSCOPIC-SCALE LATERAL INHOMOGENEITIES OF THE PHOTOEMISSION RESPONSE OF CLEAVED GAAS [J].
CERRINA, F ;
RAYCHAUDHURI, AK ;
NG, W ;
LIANG, S ;
SINGH, S ;
WELNAK, JT ;
WALLACE, JP ;
CAPASSO, C ;
UNDERWOOD, JH ;
KORTRIGHT, JB ;
PERERA, RCC ;
MARGARITONDO, G .
APPLIED PHYSICS LETTERS, 1993, 63 (01) :63-65
[6]  
CIMINO R, IN PRESS
[7]   PHOTOEMISSION-BASED PHOTOVOLTAGE PROBE OF SEMICONDUCTOR SURFACE AND INTERFACE ELECTRONIC-STRUCTURE [J].
DEMUTH, JE ;
THOMPSON, WJ ;
DINARDO, NJ ;
IMBIHL, R .
PHYSICAL REVIEW LETTERS, 1986, 56 (13) :1408-1411
[8]  
EASTMAN DE, 1980, PHYS REV LETT, V45, P56
[9]   TIME-DEPENDENCE OF PHOTOVOLTAIC SHIFTS IN PHOTOELECTRON-SPECTROSCOPY OF SEMICONDUCTORS [J].
HECHT, MH .
PHYSICAL REVIEW B, 1991, 43 (14) :12102-12105
[10]   ROLE OF PHOTOCURRENT IN LOW-TEMPERATURE PHOTOEMISSION-STUDIES OF SCHOTTKY-BARRIER FORMATION [J].
HECHT, MH .
PHYSICAL REVIEW B, 1990, 41 (11) :7918-7921