DISLOCATION CONFIGURATIONS CHARACTERISTIC OF DEFORMED CZOCHRALSKI-GROWN SILICON-CRYSTALS

被引：8

作者：

NISHINO, Y ^{[1
]}

SAKA, H ^{[1
]}

IMURA, T ^{[1
]}

机构：

[1] NAGOYA UNIV,DEPT MET,CHIKUSA KU,NAGOYA,AICHI 464,JAPAN

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1982年 / 70卷 / 02期

关键词：

D O I：

10.1002/pssa.2210700243

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：729 / 737

页数：9

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[4]

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ESSMANN, U .

PHYSICA STATUS SOLIDI, 1965, 12 (02) :723-+

[8]

HIRTH JP, 1968, THEORY DISLOCATIONS, P353

[9] DISLOCATION PINNING EFFECT OF OXYGEN-ATOMS IN SILICON [J].

HU, SM .

[10] EFFECT OF OXYGEN ON DISLOCATION MOVEMENT IN SILICON [J].

HU, SM ;

PATRICK, WJ .