LOW-THRESHOLD DISTRIBUTED FEEDBACK LASERS FABRICATED ON MATERIAL GROWN COMPLETELY BY LP-MOCVD

被引：21

作者：

RAZEGHI, M ^{[1
]}

BLONDEAU, R ^{[1
]}

KRAKOWSKI, M ^{[1
]}

BOULEY, JC ^{[1
]}

PAPUCHON, M ^{[1
]}

DECREMOUX, B ^{[1
]}

DUCHEMIN, JP ^{[1
]}

机构：

[1] CTR NATL ETUD TELECOMMUN,F-92220 BAGNEUX,FRANCE

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1985年 / 21卷 / 06期

关键词：

D O I：

10.1109/JQE.1985.1072707

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：507 / 511

页数：5

共 8 条

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[4] 1.2-1.6-MU-M GAXIN1-XASYP1-Y-INP DH LASERS GROWN BY LPMOCVD [J].

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[5] VERY LOW THRESHOLD GAINASP-INP DOUBLE-HETEROSTRUCTURE LASERS GROWN BY LP MOCVD [J].

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ELECTRONICS LETTERS, 1983, 19 (09) :336-337

[6] AGING TEST OF MOCVD SHALLOW PROTON STRIPE GAINASP-INP, DH LASER DIODE EMITTING AT 1.5 MU-M [J].

RAZEGHI, M ;

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DUCHEMIN, JP .

ELECTRONICS LETTERS, 1983, 19 (13) :481-483

[7]

SUEMATSU Y, 1983, J LIGHTWAVE TECHNOL, V1, P162

[8] CONTINUOUS-WAVE OPERATION OF 1.5-MU-M DISTRIBUTED-FEEDBACK RIDGE-WAVEGUIDE LASERS [J].

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NELSON, AW ;

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EVANS, JS .

ELECTRONICS LETTERS, 1984, 20 (06) :225-226

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