CHARACTERIZATION OF LINEAR AND NONLINEAR PROPERTIES OF GAAS-MESFETS FOR BROAD-BAND CONTROL APPLICATIONS

被引：27

作者：

GUTMANN, RJ ^{[1
]}

FRYKLUND, DJ ^{[1
]}

机构：

[1] MA COM,ADV SEMICOND OPERAT,CONTROL CIRCUIT DEV,LOWELL,MA 01851

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 1987年 / 35卷 / 05期

关键词：

D O I：

10.1109/TMTT.1987.1133692

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：516 / 521

页数：6

共 9 条

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[6]

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CHAO, C .

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[8] A MESFET VARIABLE-CAPACITANCE MODEL FOR GAAS INTEGRATED-CIRCUIT SIMULATION [J].

TAKADA, T ;

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[9]

WHITE JF, 1977, SEMICONDUCTOR CONTRO, pCH5

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