A NEW SELF-ALIGN TECHNOLOGY FOR GAAS ANALOG MMICS

被引：4

作者：

HAGIO, M

KATSU, S

KAZUMURA, M

KANO, G

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1986年 / 33卷 / 06期

关键词：

D O I：

10.1109/T-ED.1986.22564

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：754 / 758

页数：5

共 11 条

[1] DESIGN OF MICROWAVE GAAS-MESFETS FOR BROAD-BAND LOW-NOISE AMPLIFIERS [J].

FUKUI, H .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1979, 27 (07) :643-650

[2]

Hagio M., 1984, International Electron Devices Meeting. Technical Digest (Cat. No. 84CH2099-0), P194

[3]

HIGASHISAKA A, 1983, 15TH C SOL STAT DEV, P69

[4] GAAS MONOLITHIC MICS FOR DIRECT BROADCAST SATELLITE RECEIVERS [J].

HORI, S ;

KAMEI, K ;

SHIBATA, K ;

TATEMATSU, M ;

MISHIMA, K ;

OKANO, S .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1983, 31 (12) :1089-1096

[5]

MAKI DW, 1981, MICROWAVE J, V24, P103

[6] HIGH-SPEED LOGIC AT 300-K WITH SELF-ALIGNED SUBMICROMETER-GATE GAAS-MESFETS [J].

SADLER, RA ;

EASTMAN, LF .

IEEE ELECTRON DEVICE LETTERS, 1983, 4 (07) :215-217

[7] 12-GHZ-BAND LOW-NOISE GAAS MONOLITHIC AMPLIFIERS [J].

SUGIURA, T ;

ITOH, H ;

TSUJI, T ;

HONJO, K .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1983, 31 (12) :1083-1088

[8] CONTROL OF GATE-DRAIN AVALANCHE IN GAAS-MESFETS [J].

WEMPLE, SH ;

NIEHAUS, WC ;

COX, HM ;

DILORENZO, JV ;

SCHLOSSER, WO .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (06) :1013-1018

[9] SELF-ALIGN IMPLANTATION FOR N+-LAYER TECHNOLOGY (SAINT) FOR HIGH-SPEED GAAS ICS [J].

YAMASAKI, K ;

ASAI, K ;

MIZUTANI, T ;

KURUMADA, K .

ELECTRONICS LETTERS, 1982, 18 (03) :119-121

[10]

YAMASHIRO D, 1983, INT J PEPT PROT RES, V22, P381

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