12-GHZ-BAND LOW-NOISE GAAS MONOLITHIC AMPLIFIERS

被引：4

作者：

SUGIURA, T

ITOH, H

TSUJI, T

HONJO, K

机构：

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 1983年 / 31卷 / 12期

关键词：

D O I：

10.1109/TMTT.1983.1131666

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1083 / 1088

页数：6

共 9 条

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[8] SUPER LOW-NOISE GAAS-MESFETS WITH A DEEP-RECESS STRUCTURE [J].

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