20-GHZ BAND MONOLITHIC GAAS-FET LOW-NOISE AMPLIFIER

被引：5

作者：

HIGASHISAKA, A ^{[1
]}

MIZUTA, T ^{[1
]}

机构：

[1] NIPPON ELECT CO LTD,DIV MICROWAVE & SATELLITE COMMUN,MIDORI KU,YOKAHAMA 226,JAPAN

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 1981年 / 29卷 / 01期

关键词：

TRANSISTORS; FIELD EFFECT - Applications;

D O I：

10.1109/TMTT.1981.1130277

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A 20-GHz band monolithic GaAs FET low-noise amplifier has been developed. Design and fabrication were performed by obtaining the transmission properties of the microstrip lines on a semi-insulating GaAs substrate. The developed monolithic amplifier consists of a submicron gate GaAs MESFET and the input and output distributed matching circuits on a semi-insulating GaAs substrate measuring 2. 75 mm multiplied by 1. 45 mm. A noise figure of 6. 2 dB and an associated gain of 7. 5 dB were obtained at 21 GHz without any additional tuning adjustments.

引用

页码：1 / 6

页数：6

共 13 条

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