ZN DROPS AT A SI SURFACE MEASURED BY THE REFRACTED X-RAY-FLUORESCENCE METHOD

被引：8

作者：

SASAKI, YC

KISIMOTO, M

NAGATA, S

YAMAGUCHI, S

HIROKAWA, K

机构：

[1] Institute for Materials Research, Tohoku University, Aoba-ku, Sendai 980

来源：

JOURNAL OF APPLIED PHYSICS | 1991年 / 69卷 / 12期

关键词：

D O I：

10.1063/1.347411

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Si and Zn are essentially mutually insoluble. We were able to detect Zn drops at a Si surface by using the refracted x-ray fluorescence method when the Si wafer was implanted with Zn ions at 50 keV up to doses of 1 x 10(16) cm-2. The presence of the Zn drops at the Si surface was confirmed both by measuring surface roughness and Rutherford-backscattering spectroscopy spectra.

引用

页码：8420 / 8422

页数：3

共 9 条

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[2]

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[3]

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[4]

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[5] REFRACTION EFFECT OF SCATTERED X-RAY-FLUORESCENCE AT SURFACE [J].

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[6]

SASAKI YC, 1991, APPL PHYS A-MATER, V52, P28

[7] NEW NONDESTRUCTIVE DEPTH PROFILE MEASUREMENT BY USING A REFRACTED X-RAY-FLUORESCENCE METHOD [J].

SASAKI, YC ;

HIROKAWA, K .

APPLIED PHYSICS LETTERS, 1991, 58 (13) :1384-1386

[8]

SASAKI YC, IN PRESS APPL SURF S

[9] SURFACE EXTENDED X-RAY-ABSORPTION FINE-STRUCTURE SPECTROSCOPY MEASUREMENT USING THE EVANESCENT-WAVE EFFECT OF FLUORESCENT X-RAYS [J].

SUZUKI, Y .

PHYSICAL REVIEW B, 1989, 39 (05) :3393-3395

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