NEW NONDESTRUCTIVE DEPTH PROFILE MEASUREMENT BY USING A REFRACTED X-RAY-FLUORESCENCE METHOD

被引：30

作者：

SASAKI, YC

HIROKAWA, K

机构：

[1] Department of Analytical Science, Institute for Materials Research, Tohoku University, Aoba-Ku, Sendai 980

来源：

APPLIED PHYSICS LETTERS | 1991年 / 58卷 / 13期

关键词：

D O I：

10.1063/1.104315

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrated analysis of the nondestructive depth profile near the surface of As ion-implanted Si substrate by using the refracted x-ray fluorescence method. Experimental results show that the angular distribution of the measured x-ray fluorescence is dependent on the surface roughness of the substrate.

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页码：1384 / 1386

页数：3

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