RESISTANCE BEHAVIOR AND INTERDIFFUSION OF LAYERED CUNI-NICR FILMS

被引：16

作者：

BRUCKNER, W ^{[1
]}

SCHUMANN, J ^{[1
]}

BAUNACK, S ^{[1
]}

PITSCHKE, W ^{[1
]}

KNUTH, T ^{[1
]}

机构：

[1] MICROTECH GMBH,D-14513 TELTOW,GERMANY

来源：

THIN SOLID FILMS | 1995年 / 258卷 / 1-2期

关键词：

ALLOYS; DEPTH PROFILING; DIFFUSION; ELECTRICAL PROPERTIES AND MEASUREMENTS;

D O I：

10.1016/0040-6090(94)06370-2

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

On the basis of sputtered NiCr/CuNi/NiCr triple layers and multilayers, investigations of the electrical resistance R and its temperature coefficient TCR, as well as of the concentration depth profiles and of the temperature dependence of the lattice parameter have been carried out to study the influences of the interfaces in the as-deposited state as well as annealed ones. Furthermore. the temperature dependence of the film stress has been considered. As to the resistance. the influence of the diffusion zone can be described by a parallel resistor R(i) having Delta TCR(i). These quantities are dependent on both deposition and annealing and were determined for the two configurations on silicon wafers in the as-deposited state as well as in the 300 degrees C annealed one. The AES investigations show distinct interdiffusion effects after annealing above 300 degrees C. The Ni impoverishment observed in the CuNi results in a lattice parameter decrease. The film stress is only slightly influenced by interfacial effects.

引用

页码：236 / 246

页数：11

共 27 条

[1] INFLUENCE OF THE SUBSTRATE ON THE ANNEALING BEHAVIOR OF SPUTTER-DEPOSITED NI-CR FILMS [J].