MAGNETRON SPUTTERING OF CU55NI45

被引：5

作者：

BARBER, ZH

SOMEKH, RE

机构：

[1] Univ of Cambridge, Dep of Metallurgy, & Materials Science, Cambridge,, Engl, Univ of Cambridge, Dep of Metallurgy & Materials Science, Cambridge, Engl

来源：

VACUUM | 1984年 / 34卷 / 10-1期

关键词：

D O I：

10.1016/0042-207X(84)90184-2

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：991 / 994

页数：4

共 20 条

[1] EFFECTS OF ARGON PRESSURE AND SUBSTRATE-TEMPERATURE ON THE STRUCTURE AND PROPERTIES OF SPUTTERED COPPER-FILMS [J].

CRAIG, S ;

HARDING, GL .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (02) :205-215

[2] EFFECTS OF ARGON PRESSURE ON THE STRUCTURE AND PROPERTIES OF DC PLANAR-MAGNETRON-SPUTTERED METAL AND SEMICONDUCTOR-FILMS WITH IMPLICATIONS FOR SOLAR-ENERGY APPLICATIONS [J].

CRAIG, S ;

HARDING, GL .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (03) :833-837

[3] INTERNAL-STRESSES IN SPUTTERED CHROMIUM [J].

HOFFMAN, DW ;

THORNTON, JA .

THIN SOLID FILMS, 1977, 40 (JAN) :355-363

[4] COMPRESSIVE STRESS TRANSITION IN AL, V, ZR, NB AND W METAL-FILMS SPUTTERED AT LOW WORKING PRESSURES [J].

HOFFMAN, DW ;

THORNTON, JA .

THIN SOLID FILMS, 1977, 45 (02) :387-396

[5] INTERNAL-STRESSES IN CR, MO, TA, AND PT FILMS DEPOSITED BY SPUTTERING FROM A PLANAR MAGNETRON SOURCE [J].

HOFFMAN, DW ;

THORNTON, JA .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 20 (03) :355-358

[6] EFFECTS OF SUBSTRATE ORIENTATION AND ROTATION ON INTERNAL-STRESSES IN SPUTTERED METAL-FILMS [J].

HOFFMAN, DW ;

THORNTON, JA .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (02) :134-137

[7] MODIFICATION OF EVAPORATED CHROMIUM BY CONCURRENT ION-BOMBARDMENT [J].

HOFFMAN, DW ;

GAERTTNER, MR .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (01) :425-428

[8] STRESS AND PROPERTY CONTROL IN SPUTTERED METAL-FILMS WITHOUT SUBSTRATE BIAS [J].

HOFFMAN, DW .

THIN SOLID FILMS, 1983, 107 (04) :353-358

[9]

HOFFMAN DW, 1982, 7TH P ICVM TOK, P145

[10] STRUCTURE MODIFICATION BY ION-BOMBARDMENT DURING DEPOSITION [J].

MATTOX, DM ;

KOMINIAK, GJ .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1972, 9 (01) :528-&

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