SURFACE-STATES AND THE INTRINSIC VALENCE BAND TAIL IN A-SI-H

[1] DIRECT MEASUREMENT OF GAP-STATE ABSORPTION IN HYDROGENATED AMORPHOUS-SILICON BY PHOTOTHERMAL DEFLECTION SPECTROSCOPY [J]. PHYSICAL REVIEW B, 1982, 25 (08): : 5559 - 5562

[2] ENERGY-DEPENDENCE OF THE OPTICAL MATRIX ELEMENT IN HYDROGENATED AMORPHOUS AND CRYSTALLINE SILICON [J]. PHYSICAL REVIEW B, 1985, 31 (08): : 5187 - 5198

[3] Ley L., 1984, PHYSICS HYDROGENATED, P61

[4] INSITU DETERMINATION OF POTENTIAL PROFILES IN A-SI-H [J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1986, 54 (02): : L57 - L62

[5] EVIDENCE FOR EXPONENTIAL BAND TAILS IN AMORPHOUS-SILICON HYDRIDE [J]. PHYSICAL REVIEW LETTERS, 1981, 46 (21) : 1425 - 1428

[6] PHOTOEMISSION STUDY OF EFFECT OF BULK DOPING AND OXYGEN EXPOSURE ON SILICON SURFACE STATES [J]. PHYSICAL REVIEW B, 1974, 9 (04): : 1512 - 1515

[7] WINER K, 1987, IN PRESS PHYS REV B

[1] DIRECT MEASUREMENT OF GAP-STATE ABSORPTION IN HYDROGENATED AMORPHOUS-SILICON BY PHOTOTHERMAL DEFLECTION SPECTROSCOPY [J]. PHYSICAL REVIEW B, 1982, 25 (08): : 5559 - 5562

[2] ENERGY-DEPENDENCE OF THE OPTICAL MATRIX ELEMENT IN HYDROGENATED AMORPHOUS AND CRYSTALLINE SILICON [J]. PHYSICAL REVIEW B, 1985, 31 (08): : 5187 - 5198

[3] Ley L., 1984, PHYSICS HYDROGENATED, P61

[4] INSITU DETERMINATION OF POTENTIAL PROFILES IN A-SI-H [J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1986, 54 (02): : L57 - L62

[5] EVIDENCE FOR EXPONENTIAL BAND TAILS IN AMORPHOUS-SILICON HYDRIDE [J]. PHYSICAL REVIEW LETTERS, 1981, 46 (21) : 1425 - 1428

[6] PHOTOEMISSION STUDY OF EFFECT OF BULK DOPING AND OXYGEN EXPOSURE ON SILICON SURFACE STATES [J]. PHYSICAL REVIEW B, 1974, 9 (04): : 1512 - 1515

[7] WINER K, 1987, IN PRESS PHYS REV B