ON THE NATURE OF THE SILICON ACTIVATION EFFICIENCY IN LIQUID-ENCAPSULATED CZOCHRALSKI-GROWN GAAS BY PHOTOLUMINESCENCE

被引：15

作者：

BINDAL, A

WANG, KL

CHANG, SJ

KALLEL, MA

STAFSUDD, OM

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 65卷 / 03期

关键词：

D O I：

10.1063/1.343017

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1246 / 1252

页数：7

共 21 条

[1] APPLICATIONS OF ELECTROCHEMICAL METHODS FOR SEMICONDUCTOR CHARACTERIZATION .1. HIGHLY REPRODUCIBLE CARRIER CONCENTRATION PROFILING OF VPE''HI-LO'' NORMAL-GAAS [J].

AMBRIDGE, T ;

STEVENSON, JL ;

REDSTALL, RM .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (01) :222-228

[2] SPECIFIC SITE LOCATION OF S AND SI IN ION-IMPLANTED GAAS [J].

BHATTACHARYA, RS ;

PRONKO, PP ;

LING, SC .

APPLIED PHYSICS LETTERS, 1983, 42 (10) :880-882

[3] SI IMPLANTATION IN GAAS [J].

BHATTACHARYA, RS ;

RAI, AK ;

YEO, YK ;

PRONKO, PP ;

LING, SC ;

WILSON, SR ;

PARK, YS .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (05) :2329-2337

[4]

BINDAL A, UNPUB

[5] LOW-TEMPERATURE PHOTO-LUMINESCENCE OF LIGHTLY SI-DOPED AND UNDOPED MBE GAAS [J].

BRIONES, F ;

COLLINS, DM .

JOURNAL OF ELECTRONIC MATERIALS, 1982, 11 (04) :847-866

[6] STOICHIOMETRIC DISTURBANCES IN ION-IMPLANTED COMPOUND SEMICONDUCTORS [J].

CHRISTEL, LA ;

GIBBONS, JF .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (08) :5050-5055

[7] OPTICAL ABSORPTION AND RECOMBINATION RADIATION IN SEMICONDUCTORS DUE TO TRANSITIONS BETWEEN HYDROGEN-LIKE ACCEPTOR IMPURITY LEVELS AND THE CONDUCTION BAND [J].

EAGLES, DM .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1960, 16 (1-2) :76-83

[8] ARSENIC VACANCY FORMATION IN GAAS ANNEALED IN HYDROGEN GAS-FLOW [J].

ITOH, T ;

TAKEUCHI, M .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1977, 16 (02) :227-232

[9] PHOTOLUMINESCENCE STUDIES IN IRRADIATED SI-DOPED GALLIUM-ARSENIDE [J].

JEONG, M ;

SHIRAFUJI, J ;

INUISHI, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1973, 12 (01) :109-119

[10]

KOSCHEL WH, 1977, I PHYS C SER A, V33, P98

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