THERMOELECTRIC CONTROL APPARATUS FOR FABRICATION OF THICK LITHIUM-DRIFTED GERMANIUM DETECTORS

被引：7

作者：

PALMS, JM

GREENWOOD, AH

机构：

来源：

关键词：

D O I：

10.1063/1.1719841

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：1209 / +

页数：1

共 10 条

CARTER, JR ;

SWALIN, RA .

[2]

DEARNALEY G, 1963, AERER4335

[3]

GREEN BM, PRIVATE COMMUNICATIO

[4]

HANSEN WL, 1964, UCRL11589

[5] ELECTRICAL PROPERTIES OF SILICON CONTAINING ARSENIC AND BORON [J].

MORIN, FJ ;

MAITA, JP .

PHYSICAL REVIEW, 1954, 96 (01) :28-35

[6] CHEMICAL INTERACTIONS AMONG DEFECTS IN GERMANIUM AND SILICON [J].

REISS, H ;

FULLER, CS ;

MORIN, FJ .

BELL SYSTEM TECHNICAL JOURNAL, 1956, 35 (03) :535-636

[7]

TAVENDALE AJ, 1963, NUCL INSTRUM METHODS, V25, P185

TAVENDALE, AJ .

[9]

TAVENDALE AJ, 1964, PROGRESS FASTDRIFT M

[10]

ZIEMBA FP, PRIVATE COMMUNICATIO