SUMMARY ABSTRACT - STATE CHARACTERIZATION OF THE HG1-XCDXTE PHOTOX SIO2 INTERFACE

被引:3
作者
TSAU, GH
SHER, A
MADOU, M
WILSON, JA
COTTON, VA
JONES, CE
机构
[1] SANTA BARBARA RES CTR, GOLETA, CA 93017 USA
[2] SRI INT, MENLO PK, CA 94025 USA
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 1986年 / 4卷 / 04期
关键词
D O I
10.1116/1.574012
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
引用
收藏
页码:1983 / 1985
页数:3
相关论文
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[2]  
GOETZBERGER A, 1972, CRC CRIT R SOLID ST, V6, P1
[3]   SI-SIO2 INTERFACE - ELECTRICAL PROPERTIES AS DETERMINED BY METAL-INSULATOR-SILICON CONDUCTANCE TECHNIQUE [J].
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[4]  
NICOLLIAN EH, 1982, MOS PHYSICS TECHNOLO
[5]   TECHNIQUES FOR IMPROVING THE SI-SIO2 INTERFACE CHARACTERIZATION [J].
SHER, A ;
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SU, P ;
TSUO, YH .
JOURNAL OF APPLIED PHYSICS, 1983, 54 (09) :5183-5198