TECHNIQUES FOR IMPROVING THE SI-SIO2 INTERFACE CHARACTERIZATION

被引：11

作者：

SHER, A

HOFFMAN, HJ

SU, P

TSUO, YH

机构：

[1] SOLAR ENERGY RES INST, GOLDEN, CO 80401 USA

[2] LOCKHEED PALO ALTO RES LAB, PALO ALTO, CA 94304 USA

[3] RCA CORP, CTR TECH, SOMERVILLE, NJ 08876 USA

来源：

JOURNAL OF APPLIED PHYSICS | 1983年 / 54卷 / 09期

关键词：

D O I：

10.1063/1.332744

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：5183 / 5198

页数：16

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