THE HIGH-TEMPERATURE STABILITY OF CHEMICALLY VAPOR-DEPOSITED TUNGSTEN-SILICON COUPLES RAPID THERMAL ANNEALED IN AMMONIA AND ARGON

被引：5

作者：

BROADBENT, EK ^{[1
]}

MORGAN, AE ^{[1
]}

FLANNER, JM ^{[1
]}

COULMAN, B ^{[1
]}

SADANA, DK ^{[1
]}

BURROW, BJ ^{[1
]}

ELLWANGER, RC ^{[1
]}

机构：

[1] PHILIPS RES LABS, 5600 JA EINDHOVEN, NETHERLANDS

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 64卷 / 12期

关键词：

D O I：

10.1063/1.342003

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：6721 / 6726

页数：6

共 18 条

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[2]

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[3] SELECTIVE LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION OF TUNGSTEN [J].

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RAMILLER, CL .

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[4]

BROADBENT EK, UNPUB

[5]

BRORS DL, 1983, SOLID STATE TECHNOL, V26, P183

[6]

DEBLASI JM, 1986, MATER RES SOC S P, V71, P303

[7]

Gargini P. A., 1981, International Electron Devices Meeting, P54

[8]

Gargini P. A., 1981, P IEEE IEDM, P54

[9]

GARGINI PA, 1983, RES DEV, V25, P141

[10] STRUCTURE OF SELECTIVE LOW-PRESSURE CHEMICALLY VAPOR-DEPOSITED FILMS OF TUNGSTEN [J].

GREEN, ML ;

LEVY, RA .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (05) :1243-1250

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