IMPACT OF SILICON SUBSTRATES ON LEAKAGE CURRENTS

被引：45

作者：

SLOTBOOM, JW

THEUNISSEN, MJJ

DEKOCK, AJR

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1983年 / 4卷 / 11期

关键词：

D O I：

10.1109/EDL.1983.25780

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：403 / 406

页数：4

共 12 条

[1]

ANDREWS JM, 1982, P ECS VLSI M, P43

[2] OXYGEN PRECIPITATION EFFECTS ON SI-N+-P JUNCTION LEAKAGE BEHAVIOR [J].

CHAKRAVARTI, SN ;

GARBARINO, PL ;

MURTY, K .

APPLIED PHYSICS LETTERS, 1982, 40 (07) :581-583

[3] SURVEY OF HIGH-DENSITY DYNAMIC RAM CELL CONCEPTS [J].

CHATTERJEE, PK ;

TAYLOR, GW ;

EASLEY, RL ;

FU, HS ;

TASCH, AF .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (06) :827-838

[4]

OTSUAK H, 1982, IEEE ELECTRON DEVICE, V3, P812

[5] THE CONCEPT OF GENERATION AND RECOMBINATION LIFETIMES IN SEMICONDUCTORS [J].

SCHRODER, DK .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (08) :1336-1338

[6]

Slotboom J. W., 1981, International Electron Devices Meeting, P667

[7]

SLOTBOOM JW, 1982, SEP P ESSDERC C, P25

[8]

SUN RC, 1977, IEEE ELECTRON DEVICE, P254

[9]

VANDERSPIEGEL J, 1979, THESIS KATHOLIEKE U

[10]

WHITE LS, 1982, JAN S SIL PROC SAN J

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