CHEMICAL BEAM EPITAXY OF GAAS FILMS USING SINGLE-SOURCE PRECURSORS

被引：18

作者：

EKERDT, JG ^{[1
]}

SUN, YM ^{[1
]}

JACKSON, MS ^{[1
]}

LAKHOTIA, V ^{[1
]}

PACHECO, KA ^{[1
]}

KOSCHMIEDER, SU ^{[1
]}

COWLEY, AH ^{[1
]}

JONES, RA ^{[1
]}

机构：

[1] UNIV TEXAS,DEPT CHEM,AUSTIN,TX 78712

来源：

JOURNAL OF CRYSTAL GROWTH | 1992年 / 124卷 / 1-4期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1016/0022-0248(92)90453-P

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Two types of single-source precursors were studied that contained different Ga:As stoichiometry, [Me2Ga(mu-As-t-Bu2)]2 with a 1:1 stoichiometry and Ga(As-t-Bu2)3 with a 1:3 stoichiometry. Epitaxial films were grown from Ga(As-t-Bu2)3 on (100) GaAs in a chemical beam epitaxy system at 750 K and 6 X 10(-5) Torr. Temperature programmed desorption (TPD) studies for [Me2Ga(mu-As-t-Bu2)]2 and Ga(As-t-Bu2)3 have been undertaken in a surface analysis chamber to develop an understanding of how precursor structure and reaction chemistry influence film properties. tert-Butyl ligands appear to react by beta-hydride elimination process to isobutene and AsH. The methyl ligands appear to desorb rather than react with surface hydride to methane.

引用

页码：158 / 164

页数：7

共 12 条

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