PYROLYSIS STUDIES OF THE SINGLE-SOURCE GAAS PRECURSORS [ME2GA(MU-AS-I-PR2)]3, [ME2GA(MU-ASME2)]3, [ME2GA(MU-AS-T-BU2)]2, AND [ET2GA(MU-AS-T-BU2)]2

Pyrolysis of the single-source GaAs precursors [Me2Ga(mu-As-i-Pr2)]3 (1), [Me2Ga(mu-AsMe2)]3 (2), [Me2Ga(mu-As-t-Bu2)]2 (3), and [Et2Ga(mu-As-t-Bu2)]2 (4) was studied at 1 x 10(-2) Torr in the presence of H-2 and He carrier gases over the temperature range 150-600-degrees-C in a heated quartz tube. The trimeric precursors, 1 and 2, reacted at temperatures below 150-degrees-C to produce diarsines, making them unsuitable for film growth. Similar reactions were not observed for the dimeric precursors 3 and 4. The results for ligand loss were consistent with beta-H elimination, intramolecular coupling, and intermolecular coupling pathways. Loss of t-Bu ligands from 3 and 4 was observed to begin at 325-degrees-C. The onset of methyl ligand loss from 3 was observed at 425-degrees-C, while the ethyl ligands of 4 began to be eliminated at 350-degrees-C, indicating that low-temperature growth of stoichiometric GaAs should be possible from 3 and 4.