MECHANISMS OF GAAS GROWTH USING TERTIARYBUTYLARSINE AND TRIMETHYLGALLIUM

被引：27

作者：

LARSEN, CA ^{[1
]}

LI, SH ^{[1
]}

BUCHAN, NI ^{[1
]}

STRINGFELLOW, GB ^{[1
]}

机构：

[1] UNIV UTAH,DEPT ELECT ENGN,SALT LAKE CITY,UT 84112

来源：

JOURNAL OF CRYSTAL GROWTH | 1989年 / 94卷 / 03期

关键词：

D O I：

10.1016/0022-0248(89)90091-2

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

收藏

页码：673 / 682

页数：10

相关论文

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