PHOTOREFLECTANCE STUDY OF SURFACE FERMI-LEVEL IN MOLECULAR-BEAM EPITAXIAL GROWN INALAS HETEROSTRUCTURES

被引：18

作者：

HWANG, JS ^{[1
]}

TYAN, SL ^{[1
]}

CHOU, WY ^{[1
]}

LEE, ML ^{[1
]}

WEYBURNE, D ^{[1
]}

HANG, Z ^{[1
]}

LIN, HH ^{[1
]}

LEE, TL ^{[1
]}

机构：

[1] NATL TAIWAN UNIV,DEPT ELECT ENGN,TAIPEI,TAIWAN

来源：

APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 24期

关键词：

D O I：

10.1063/1.111294

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have studied the band gaps and the surface Fermi level positions of a series of In1-xAlxAs surface-intrinsic-n+ structures at room temperature by photoreflectance. Experiments demonstrated that over aluminum concentrations of 0.42-0.57, the surface Fermi level is not pinned at midgap, as commonly believed, but instead varies, respectively, from 0.50 +/- 0.01 to 0.81 +/- 0.01 eV below the conduction band edge.

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页码：3314 / 3316

页数：3

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