BAND-GAP DETERMINATION BY PHOTOREFLECTANCE OF INGAAS AND INALAS LATTICE MATCHED TO INP

被引：107

作者：

GASKILL, DK ^{[1
]}

BOTTKA, N ^{[1
]}

AINA, L ^{[1
]}

MATTINGLY, M ^{[1
]}

机构：

[1] ALLIED SIGNAL AEROSP TECHNOL CTR,COLUMBIA,MD 21045

来源：

APPLIED PHYSICS LETTERS | 1990年 / 56卷 / 13期

关键词：

D O I：

10.1063/1.102533

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Photoreflectance-derived band-gap parameters as a function of temperature for InGaAs and InAlAs lattice matched to InP are reported. The experiment was performed on a set of samples of various compositions (and strains) yielding greater reliability and ensuring self-consistency. For InGaAs, fits to the Varshni equation gave E0(T=0 K)=803 meV, α=4.0×10 -4 eV K-1, and β=226 K. For InAlAs, E0(T=0 K)=1.541 eV, α=4.7×10- 4 eV K-1, β=149 K, and Δ0=338 meV.

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页码：1269 / 1271

页数：3

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