METAL-INSULATOR TRANSITIONS IN DOPED SILICON AND GERMANIUM

被引：16

作者：

DASILVA, AF

机构：

来源：

PHYSICAL REVIEW B | 1988年 / 37卷 / 09期

关键词：

D O I：

10.1103/PhysRevB.37.4799

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：4799 / 4800

页数：2

共 26 条

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