PHOTOLUMINESCENCE IDENTIFICATION OF THE C AND BE ACCEPTOR LEVELS IN INP

被引：68

作者：

SKROMME, BJ

STILLMAN, GE

OBERSTAR, JD

CHAN, SS

机构：

[1] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

[2] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1984年 / 13卷 / 03期

关键词：

D O I：

10.1007/BF02656648

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：463 / 491

页数：29

共 25 条

[1] INCORPORATION AND CHARACTERIZATION OF ACCEPTORS IN EPITAXIAL GAAS [J].

ASHEN, DJ ;

DEAN, PJ ;

HURLE, DTJ ;

MULLIN, JB ;

WHITE, AM .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1975, 36 (10) :1041-1053

[2] INDIUM-PHOSPHIDE .2. LIQUID EPITAXIAL-GROWTH [J].

ASTLES, MG ;

SMITH, FGH ;

WILLIAMS, EW .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (12) :1750-1757

[3]

BARTHRUFF D, 1979, J ELECTRON MATER, V8, P485, DOI 10.1007/BF02652400

[4] EXCITED-STATES OF SHALLOW ACCEPTORS IN INP [J].

BARTHRUFF, D ;

HASPEKLO, H .

JOURNAL OF LUMINESCENCE, 1981, 24-5 (NOV) :181-184

[5] INCORPORATION OF SI IN LIQUID-PHASE EPITAXIAL INP LAYERS [J].

BAUMANN, GG ;

BENZ, KW ;

PILKUHN, MH .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (08) :1232-1235

[6]

Burkhard H., 1981, Gallium Arsenide and Related Compounds, 1980. Eighth International Symposium on Gallium Arsenide and Related Compounds, P659

[7] THE GROWTH AND PERFECTION OF SINGLE-CRYSTAL INDIUM-PHOSPHIDE PRODUCED BY THE LEC TECHNIQUE [J].

COCKAYNE, B ;

BROWN, GT ;

MACEWAN, WR .

JOURNAL OF CRYSTAL GROWTH, 1981, 54 (01) :9-15

[8] ACCEPTOR EXCITED-STATES IN INDIUM-PHOSPHIDE [J].

DEAN, PJ ;

ROBBINS, DJ ;

BISHOP, SG .

SOLID STATE COMMUNICATIONS, 1979, 32 (05) :379-384

[9] PHOTO-LUMINESCENCE AS A DIAGNOSTIC OF SEMICONDUCTORS [J].

DEAN, PJ .

PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS, 1982, 5 (1-2) :89-174

[10] DYE-LASER SELECTIVE SPECTROSCOPY IN BULK-GROWN INDIUM-PHOSPHIDE [J].

DEAN, PJ ;

ROBBINS, DJ ;

BISHOP, SG .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1979, 12 (24) :5567-5575

← 1 2 3 →