INVESTIGATION OF MOVPE-GROWN IN0.53GA0.47AS/INP MULTIQUANTUM WELLS BY RAMAN-SPECTROSCOPY AND X-RAY-DIFFRACTOMETRY

被引：9

作者：

FINDERS, J ^{[1
]}

KEUTER, M ^{[1
]}

GNOTH, D ^{[1
]}

GEURTS, J ^{[1
]}

WOITOK, J ^{[1
]}

KOHL, A ^{[1
]}

MULLER, R ^{[1
]}

HEIME, K ^{[1
]}

机构：

[1] RHEIN WESTFAL TH AACHEN,INST HALBLEITERTECH,W-5100 AACHEN,GERMANY

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1993年 / 21卷 / 2-3期

关键词：

D O I：

10.1016/0921-5107(93)90339-O

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

InGaAs/InP multi-quantum well structures, grown by metal-organic vapour phase-epitaxy, were investigated by Raman spectroscopy and X-ray diffractometry to analyse the influence of precursor gas switching parameters on the interface abruptness. Owing to carry-over effects, InAsP is formed at the InGaAs-to-InP interface for low PH3 purging times (1 s), while for purging times greater than 4 s exchange of As by P leads to the formation of an InGaAsP interface layer, which for purging beyond 10 s saturates at a thickness of 1.2 nm.

引用

页码：161 / 164

页数：4

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