TEMPORAL PROFILE OF OPTICAL-TRANSMISSION PROBE FOR PULSED-LASER HEATING OF AMORPHOUS-SILICON FILMS

被引:24
作者
PARK, HK
XU, XF
GRIGOROPOULOS, CP
DO, N
KLEES, L
LEUNG, PT
TAM, AC
机构
[1] IBM CORP,ALMADEN RES CTR,DIV RES,SAN JOSE,CA 95120
[2] TH DARMSTADT,INST ANGEW PHYS,W-6100 DARMSTADT,GERMANY
[3] PORTLAND STATE UNIV,DEPT PHYS,PORTLAND,OR 97207
关键词
D O I
10.1063/1.107786
中图分类号
O59 [应用物理学];
学科分类号
摘要
The transient temperature field development during heating of an amorphous silicon (a-Si) film, deposited on a fused quartz substrate by pulsed excimer laser irradiation is studied. Experimental optical transmission data are compared with heat transfer modeling results. The temperature-dependence of the material complex refractive index through the thin film thickness is taken into account.
引用
收藏
页码:749 / 751
页数:3
相关论文
共 15 条
[1]  
[Anonymous], 1976, OPTICS THIN FILMS OP
[2]   DEPTH PROFILING OF NONUNIFORM OPTICAL-ABSORPTION IN THIN-FILMS - APPLICATION TO HYDROGENATED AMORPHOUS-SILICON [J].
ASANO, A ;
STUTZMANN, M .
JOURNAL OF APPLIED PHYSICS, 1991, 70 (09) :5025-5034
[3]  
Born M., 1980, PRINCIPLES OPTICS
[4]   TEMPERATURE-DEPENDENCE OF OPTICAL-CONSTANTS FOR AMORPHOUS-SILICON [J].
DO, N ;
KLEES, L ;
LEUNG, PT ;
TONG, F ;
LEUNG, WP ;
TAM, AC .
APPLIED PHYSICS LETTERS, 1992, 60 (18) :2186-2188
[5]  
GRIGOROPOULOS CP, IN PRESS INT J HEAT
[6]  
JACOBSEN R, 1965, PROG OPTICS, V5, P247
[7]  
LEUNG PT, IN PRESS J APPL PHYS
[8]   TIME-RESOLVED TEMPERATURE-MEASUREMENT OF PICOSECOND LASER IRRADIATED SILICON [J].
LOMPRE, LA ;
LIU, JM ;
KURZ, H ;
BLOEMBERGEN, N .
APPLIED PHYSICS LETTERS, 1983, 43 (02) :168-170
[9]   TIME RESOLVED MEASUREMENTS DURING PULSED LASER IRRADIATION OF SILICON [J].
LOWNDES, DH ;
JELLISON, GE .
SEMICONDUCTORS AND SEMIMETALS, 1984, 23 (0C) :313-404