TEMPORAL PROFILE OF OPTICAL-TRANSMISSION PROBE FOR PULSED-LASER HEATING OF AMORPHOUS-SILICON FILMS

被引:24
作者
PARK, HK
XU, XF
GRIGOROPOULOS, CP
DO, N
KLEES, L
LEUNG, PT
TAM, AC
机构
[1] IBM CORP,ALMADEN RES CTR,DIV RES,SAN JOSE,CA 95120
[2] TH DARMSTADT,INST ANGEW PHYS,W-6100 DARMSTADT,GERMANY
[3] PORTLAND STATE UNIV,DEPT PHYS,PORTLAND,OR 97207
关键词
D O I
10.1063/1.107786
中图分类号
O59 [应用物理学];
学科分类号
摘要
The transient temperature field development during heating of an amorphous silicon (a-Si) film, deposited on a fused quartz substrate by pulsed excimer laser irradiation is studied. Experimental optical transmission data are compared with heat transfer modeling results. The temperature-dependence of the material complex refractive index through the thin film thickness is taken into account.
引用
收藏
页码:749 / 751
页数:3
相关论文
共 15 条
[11]   CALCULATIONS OF MELTING THRESHOLD ENERGIES OF CRYSTALLINE AND AMORPHOUS MATERIALS DUE TO PULSED-LASER IRRADIATION [J].
ONG, CK ;
TAN, HS ;
SIN, EH .
MATERIALS SCIENCE AND ENGINEERING, 1986, 79 (01) :79-85
[12]  
PALIK ED, 1985, HDB OPTICAL CONSTANT, V1, P571
[13]  
SIREGAR MRT, 1979, HELV PHYS ACTA, V52, P45
[14]  
Wood R. F., 1984, SEMICONDUCTORS SEMIM, V23
[15]   EFFICIENT PULSED LASER REMOVAL OF 0.2-MU M SIZED PARTICLES FROM A SOLID-SURFACE [J].
ZAPKA, W ;
ZIEMLICH, W ;
TAM, AC .
APPLIED PHYSICS LETTERS, 1991, 58 (20) :2217-2219