THIN-FILM INTERACTION OF ALUMINUM AND HAFNIUM - INFLUENCE OF COPPER AND SILICON

被引：4

作者：

BALL, RK

FREEMAN, WG

TODD, AG

机构：

来源：

关键词：

D O I：

10.1016/0040-6090(88)90255-6

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：235 / 248

页数：14

共 26 条

[1]

Baird JD., 1960, J NUCL ENERGY PART R, V11, P81

BALL, RK ;

TODD, AG .

[3]

BORCHARD HJ, 1957, J AM CHEM SOC, V78, P41

[4] INITIAL REACTION RATES FROM DTA [J].

BORCHARDT, HJ .

JOURNAL OF INORGANIC & NUCLEAR CHEMISTRY, 1960, 12 (3-4) :252-254

[5]

DYBKOV VI, 1986, J MATER SCI, V21, P3078, DOI 10.1007/BF00553339

FURUSHIRO, N ;

HORI, S .

ACTA METALLURGICA, 1985, 33 (05) :867-872

[7]

Gardner D. S., 1985, 1985 Proceedings of the Second International IEEE VLSI Multilevel Interconnection Conference (Cat. No.85CH2197-2), P102

GOSELE, U ;

TU, KN .

[9]

Hori S., 1981, J JPN I LIGHT MET, V31, P649

[10]

HORI S, 1981, 4TH P INT C RAP QUEN, P1525