GROWTH OF HIGH-QUALITY MICROCRYSTALLINE SILICON BY LAYER-BY-LAYER DEPOSITION TECHNIQUE

被引：1

作者：

PARK, KC

KIM, SK

PARK, M

JUN, JM

LEE, KH

JANG, J

机构：

[1] Department of Physics, Kyung Hee University, Seoul, 130-701, Dongdaemun-ku

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 1994年 / 34卷 / 1-4期

关键词：

D O I：

10.1016/0927-0248(94)90079-5

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

We have studied the growth of microcrystalline silicon (mu c-Si) films with SiH4 or SiH4/SiF4 by the layer-by-layer deposition technique, where the deposition and hydrogen radical exposure (HRE) are done alternatively. With increasing the HRE time, the crystalline volume fraction increases and the hydrogen content decreases. A mechanism for enhancement of crystallinity by the HRE treatment is proposed.

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页码：509 / 515

页数：7

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