TEMPERATURE-DEPENDENCE OF THE ELECTRON-SPIN-RESONANCE IN NITROGEN-RICH AMORPHOUS-SILICON NITRIDE

被引：11

作者：

CHEN, D ^{[1
]}

VINER, JM ^{[1
]}

TAYLOR, PC ^{[1
]}

KANICKI, J ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

PHYSICAL REVIEW B | 1994年 / 49卷 / 19期

关键词：

D O I：

10.1103/PhysRevB.49.13420

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The intensity of the dark electron-spin-resonance (ESR) signal, which is commonly observed in nitrogen-rich hydrogenated amorphous silicon nitride (a-SiN1.6:H), is shown to depend on temperature. This temperature dependence is compared to that observed in amorphous arsenic (a-As), which has a similar thermally generated ESR signal, and to the temperature-independent ESR signal observed in a-Si:H. Comparisons of optically induced absorption spectra for a-SiN1.6:H and a-As suggest that the defects contributing to the subband-gap absorption may not exhibit the strong electron-lattice interactions that characterize those in a-As but, rather, result most probably from large potential fluctuations.

引用

页码：13420 / 13422

页数：3

共 15 条

[1] MODEL FOR ELECTRONIC-STRUCTURE OF AMORPHOUS-SEMICONDUCTORS
ANDERSON, PW
[J]. PHYSICAL REVIEW LETTERS, 1975, 34 (15) : 953 - 955
[2] STRUCTURE AND ELECTRONIC STATES IN DISORDERED-SYSTEMS
BARYAM, Y
ADLER, D
JOANNOPOULOS, JD
[J]. PHYSICAL REVIEW LETTERS, 1986, 57 (04) : 467 - 470
[3] OPTICALLY INDUCED METASTABLE PARAMAGNETIC STATES IN AMORPHOUS-SEMICONDUCTORS
BISHOP, SG
STROM, U
TAYLOR, PC
[J]. PHYSICAL REVIEW B, 1977, 15 (04): : 2278 - 2294
[4] POTENTIAL FLUCTUATIONS DUE TO INHOMOGENEITY IN HYDROGENATED AMORPHOUS-SILICON AND THE RESULTING CHARGED DANGLING-BOND DEFECTS
BRANZ, HM
SILVER, M
[J]. PHYSICAL REVIEW B, 1990, 42 (12) : 7420 - 7428
[5] CHEN D, 1992, MATER RES SOC S P, V258, P661
[6] FRITZSCHE H, IN PRESS PHILOS MA B
[7] BOND DENSITIES AND ELECTRONIC-STRUCTURE OF AMORPHOUS SINX-H
GURAYA, MM
ASCOLANI, H
ZAMPIERI, G
CISNEROS, JI
DASILVA, JHD
CANTAO, MP
[J]. PHYSICAL REVIEW B, 1990, 42 (09): : 5677 - 5684
[8] Kanicki J, 1992, AMORPHOUS MICROCRYST
[9] Kanicki J., 1991, AMORPHOUS MICROCRYST
[10] THE NATURE OF THE DOMINANT DEEP TRAP IN AMORPHOUS-SILICON NITRIDE FILMS - EVIDENCE FOR A NEGATIVE CORRELATION-ENERGY
LENAHAN, PM
KRICK, DT
KANICKI, J
[J]. APPLIED SURFACE SCIENCE, 1989, 39 (1-4) : 392 - 405

← 1 2 →