CHEMICAL-VAPOR-DEPOSITION OF METALS .2. OVERVIEW OF SELECTIVE CVD OF METALS

The selective chemical vapor deposition (CVD) of metals from metal-containing compounds is reviewed and the approaches taken are classified according to the different physicochemical phenomena which take place on the growth and non-growth surfaces. These include: an intrinsic difference in reaction rates, sacrificial solid-state co-reactant, activation of the growth surface, radiation-induced activation of the growth surface, passivation of non-growth surfaces, and a physical nucleation barrier. The results from the literature suggest that surface modification, in which the growth surface is activated or the non-growth surface is passivated, is a promising method to control selectivity. However, few results are available from experiments with well-characterized surfaces, making meaningful comparisons of the origin of selective CVD difficult to interpret.